[B-1-6] Power GaAs MESFETs with a Graded Recess Structure

Asamitsu HIGASHISAKA、Takashi FURUTSUKA、Yoichi AONO、Yoichiro TAKAYAMA、Fumio HASEGAWA (1.Central Research Laboratories、2.Nippon Electric Co., Ltd.)

https://doi.org/10.7567/SSDM.1979.B-1-6