A New Method of Characterizing the In-depth Profile of Thermally Induced Defects in CZ Si

1981 Conference on Solid State Devices

Aug 26, 1981 - Aug 27, 1981
The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

Hiroshi NAKAYAMA, Johji KATSURA, Taneo NISHINO, Yoshihiro HAMAKAWA (1.Faculty of Engineering Science, Osaka University)