[A-4-9] Novel Low Temperature (＜300℃) Annealing of Amorphous Si by Scanned High Energy (～2.5 MeV) Heavy Ion Beam

Jyoji Nakata、Kenji Kajiyama (1.Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation)

https://doi.org/10.7567/SSDM.1981.A-4-9