[B-6-3] Chemical Vapor Deposition and Characterization of Phosphorus-Nitride (P3N5) Gate Insulator for An Inversion-Mode InP MISFET

Yukihiro Hirota, Takeshi Kobayashi, Yoshitaka Furukawa (1.Musashino Electrical Communication Laboratory, N.T.T.)

https://doi.org/10.7567/SSDM.1982.B-6-3