[C-2-4] Modified Schottky Barrier Heights by Interfacial Doped Layers: MBE Al on GaAs

Stephen J. Eglash、Shihong Pan、Dang Mo、William E. Spicer、Douglas M. Collins (1.Stanford Electronics Laboratories, Stanford University、2.Solid State Laboratory, Hewlett-Packard Laboratories)

https://doi.org/10.7567/SSDM.1982.C-2-4