Fraction of Interstitialcy Mechanism in Impurity Diffusion in Silicon

Satoru Matsumoto; Yutaka Ishikawa; Tatsuya Niimi

doi:https://doi.org/10.7567/SSDM.1983.A-1-4

1983 Conference on Solid State Devices and Materials

Aug 30, 1983 - Sep 1, 1983
The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[A-1-4] Fraction of Interstitialcy Mechanism in Impurity Diffusion in Silicon

Satoru Matsumoto, Yutaka Ishikawa, Tatsuya Niimi (1.Department of Electrical Engineering, Keio University, 2.Department of Applied Physics, Tokai University)

https://doi.org/10.7567/SSDM.1983.A-1-4

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