Formation of Si Epi./MgO･Al2O3 Epi./SiO2/Si and Its Epitaxial Film Quality

Masao Mikami; Yasuaki Hokari; Koji Egami; Hideki Tsuya; Masaru Kanamori

doi:https://doi.org/10.7567/SSDM.1983.A-2-3

1983 Conference on Solid State Devices and Materials

Aug 30, 1983 - Sep 1, 1983
The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[A-2-3] Formation of Si Epi./MgO･Al2O3 Epi./SiO2/Si and Its Epitaxial Film Quality

Masao Mikami, Yasuaki Hokari, Koji Egami, Hideki Tsuya, Masaru Kanamori (1.Fundamental Research Laboratories and Microelectronics Laboratories, NEC Corporation)

https://doi.org/10.7567/SSDM.1983.A-2-3

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