Growth Conditions of Evaporated Amorphous Si Films onto SiO2, Patterns by Lateral Solid Phase Epitaxy

Hiroshi Yamamoto; Hiroshi Ishiwara; Seijiro Furukawa; Masao Tamura; Takashi Tokuyama

doi:https://doi.org/10.7567/SSDM.1983.A-3-2

[A-3-2] Growth Conditions of Evaporated Amorphous Si Films onto SiO2, Patterns by Lateral Solid Phase Epitaxy

Hiroshi Yamamoto、Hiroshi Ishiwara、Seijiro Furukawa、Masao Tamura、Takashi Tokuyama (1.Department of Applied Electronics, Tokyo Institute of Technology、2.Central Research Laboratroy, Hitachi Ltd.)

https://doi.org/10.7567/SSDM.1983.A-3-2

1983 Conference on Solid State Devices and Materials

[A-3-2] Growth Conditions of Evaporated Amorphous Si Films onto SiO2, Patterns by Lateral Solid Phase Epitaxy