Low Temperature Growth of Silicon Dioxide by Direct Photochemical Reaction of Si2H6 and O2

Y. Mishima; Y. Ashida; M. Hirose; Y. Osaka

doi:https://doi.org/10.7567/SSDM.1983.A-4-3

1983 Conference on Solid State Devices and Materials

Aug 30, 1983 - Sep 1, 1983
The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[A-4-3] Low Temperature Growth of Silicon Dioxide by Direct Photochemical Reaction of Si2H6 and O2

Y. Mishima, Y. Ashida, M. Hirose, Y. Osaka (1.Department of Electrical Engineering, Hiroshima University, 2.Corporate Development Department, Mitsui Toatsu Chemicals, Inc.)

https://doi.org/10.7567/SSDM.1983.A-4-3

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