[B-7-5] Degradation Mechanism in 1.3 μm InGaAsP/InP Buried Crescent Laser Diode

E. OOMURA、H. HIGUCHI、R. HIRANO、Y. SAKAKIBARA、H. NAMIZAKI、W. SUSAKI (1.LSI Research and Development Laboratory, Mitsubishi Electric Corporation)

https://doi.org/10.7567/SSDM.1983.B-7-5