GaAs-AlxGa1-xAs Multiquantum Well Visible Lasers Grown by Molecular Beam Epitaxy

M. Mashita; R. M. Kolbas; C. Nozaki; Y. Ashizawa; H. Furuyama; Y. Uematsu

doi:https://doi.org/10.7567/SSDM.1983.C-4-6LN

1983 Conference on Solid State Devices and Materials

1983年8月30日〜 1983年9月1日
The Tokyo Chamber of Commerce and Industry, Tokyo, Japan

[C-4-6LN] GaAs-AlxGa1-xAs Multiquantum Well Visible Lasers Grown by Molecular Beam Epitaxy

M. Mashita、R. M. Kolbas、C. Nozaki、Y. Ashizawa、H. Furuyama、Y. Uematsu (1.Toshiba R & D Center, Toshiba Corp.、2.Corporate Technology Center, Honeywell Inc.)

https://doi.org/10.7567/SSDM.1983.C-4-6LN

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