[B-3-2] Interface-Trap Generation Modeling of Fowler-Nordheim Tunnel Injection into Ultrathin Gate Oxide

S. Horiguchi、T. Kobayashi、K. Saito (1.Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation)

https://doi.org/10.7567/SSDM.1984.B-3-2