[B-5-3] Nondestructive Measurements of Si-SiO2 Interface Structures Studied by Using X-Ray Excited Si KLL Auger Electron Spectra

Toshihisa Suzuki、Masaaki Muto、Motohiro Hara、Takeo Hattori、Kikuo Yamabe、Hiroshi Yamauchi (1.Department of Electrical Engineering, Musashi Institute of Technology、2.Fujitsu Laboratories, Ltd.、3.VLSI Research Center, Toshiba Corporation、4.Shimadzu Seisakusho Ltd.)

https://doi.org/10.7567/SSDM.1984.B-5-3