[C-4-3] High Current Gain AlGaAs/GaAs Heterojunction Bipolar Transistors with Heavily Doped Base

Hiroshi ITO, Tadao ISHIBASHI, Takayuki SUGETA (1.Atsugi Electrical Communication Laboratory, NTT)

https://doi.org/10.7567/SSDM.1984.C-4-3