Growth Conditions and Doping Control in GaInAsP/InP OMVPE

Sigeo Sugou; Atsushi Kameyama; Yasuyuki Miyamoto; Chiaki Watanabe; Kazuhito Furuya; Yasuharu Suematsu

doi:https://doi.org/10.7567/SSDM.1984.D-11-5

1984 International Conference on Solid State Devices and Materials

Aug 30, 1984 - Sep 1, 1984
International Conference Center Kobe, Kobe, Japan

[D-11-5] Growth Conditions and Doping Control in GaInAsP/InP OMVPE

Sigeo Sugou, Atsushi Kameyama, Yasuyuki Miyamoto, Chiaki Watanabe, Kazuhito Furuya, Yasuharu Suematsu (1.Department of Physical Electronics, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.1984.D-11-5

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