Growth Conditions and Doping Control in GaInAsP/InP OMVPE

Sigeo Sugou; Atsushi Kameyama; Yasuyuki Miyamoto; Chiaki Watanabe; Kazuhito Furuya; Yasuharu Suematsu

doi:https://doi.org/10.7567/SSDM.1984.D-11-5

1984 International Conference on Solid State Devices and Materials

1984年8月30日〜 1984年9月1日
International Conference Center Kobe, Kobe, Japan

[D-11-5] Growth Conditions and Doping Control in GaInAsP/InP OMVPE

Sigeo Sugou、Atsushi Kameyama、Yasuyuki Miyamoto、Chiaki Watanabe、Kazuhito Furuya、Yasuharu Suematsu (1.Department of Physical Electronics, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.1984.D-11-5

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