[D-2-4] Characterization of Residual Stress in Semi-Insulating GaAs:Cr by Photoluminescence Method

Y. FUJIWARA、A. KOJIMA、T. NISHINO、Y. HAMAKAWA、K. YASUTAKA、M. UMENO、H. KAWABE (1.Department of Electrical Engineering, Faculty of Engineering Science, Osaka University、2.Department of Precision Engineering, Faculty of Engineering, Osaka University)

https://doi.org/10.7567/SSDM.1984.D-2-4