High Power and High Temperature Operation of InGaAsP/InP Buried Crescent Laser Diode emitting at 1.3μm

Y. SAKAKIBARA; E. OOMURA; H. HIGUCHI; Y. NAKAJIMA; H. NAMIZAKI; K. IKEDA; W. SUSAKI

doi:https://doi.org/10.7567/SSDM.1984.LD-6-4

1984 International Conference on Solid State Devices and Materials

1984年8月30日〜 1984年9月1日
International Conference Center Kobe, Kobe, Japan

[LD-6-4] High Power and High Temperature Operation of InGaAsP/InP Buried Crescent Laser Diode emitting at 1.3μm

Y. SAKAKIBARA、E. OOMURA、H. HIGUCHI、Y. NAKAJIMA、H. NAMIZAKI、K. IKEDA、W. SUSAKI (1.LSI Research & Development Laboratory, Mitsubishi Electric Corporation)

https://doi.org/10.7567/SSDM.1984.LD-6-4

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