Computer Controlled Phase-Locked Epitaxy(PLE) of (GaAs)n(AlAs)n using RHEED Oscillation

T. Sakamoto; H. Funabashi; K. Ohta; T. Nakagawa; N. J. Kawai; T. Kojima

doi:https://doi.org/10.7567/SSDM.1984.LD-6-7

1984 International Conference on Solid State Devices and Materials

Aug 30, 1984 - Sep 1, 1984
International Conference Center Kobe, Kobe, Japan

[LD-6-7] Computer Controlled Phase-Locked Epitaxy(PLE) of (GaAs)n(AlAs)n using RHEED Oscillation

T. Sakamoto, H. Funabashi, K. Ohta, T. Nakagawa, N. J. Kawai, T. Kojima (1.Electrotechnical Laboratory, 2.Japan Aviation Electronics Industry Co. Ltd.)

https://doi.org/10.7567/SSDM.1984.LD-6-7

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