Interface Stress at InGaPAs/GaAs Heterojunction

Sho SHIRAKATA; Yasufumi FUJIWARA; Masahiko KONDO; Taneo NISHINO; Yoshihiro HAMAKAWA

doi:https://doi.org/10.7567/SSDM.1985.B-2-3

1985 Conference on Solid State Devices and Materials

1985年8月25日〜 1985年8月27日
Nippon Toshi Center, Tokyo, Japan

[B-2-3] Interface Stress at InGaPAs/GaAs Heterojunction

Sho SHIRAKATA、Yasufumi FUJIWARA、Masahiko KONDO、Taneo NISHINO、Yoshihiro HAMAKAWA (1.Department of Electrical Engineering, Faculty of Engineering Science, Osaka University)

https://doi.org/10.7567/SSDM.1985.B-2-3

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