Formation of GaAs-SOI on Si Substrates by Use of Fluoride Insulators

Tanemasa ASANO; Hiroshi ISHIWARA; Hee Chul LEE; Kazuo TSUTSUI; Seijiro FURUKAWA

doi:https://doi.org/10.7567/SSDM.1985.B-2-6

1985 Conference on Solid State Devices and Materials

1985年8月25日〜 1985年8月27日
Nippon Toshi Center, Tokyo, Japan

[B-2-6] Formation of GaAs-SOI on Si Substrates by Use of Fluoride Insulators

Tanemasa ASANO、Hiroshi ISHIWARA、Hee Chul LEE、Kazuo TSUTSUI、Seijiro FURUKAWA (1.Graduate School of Seience and Engineering, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.1985.B-2-6

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