Formation of GaAs-SOI on Si Substrates by Use of Fluoride Insulators

Tanemasa ASANO; Hiroshi ISHIWARA; Hee Chul LEE; Kazuo TSUTSUI; Seijiro FURUKAWA

doi:https://doi.org/10.7567/SSDM.1985.B-2-6

[B-2-6] Formation of GaAs-SOI on Si Substrates by Use of Fluoride Insulators

Tanemasa ASANO, Hiroshi ISHIWARA, Hee Chul LEE, Kazuo TSUTSUI, Seijiro FURUKAWA (1.Graduate School of Seience and Engineering, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.1985.B-2-6

1985 Conference on Solid State Devices and Materials

[B-2-6] Formation of GaAs-SOI on Si Substrates by Use of Fluoride Insulators