Single Crystal Growth of ZnS by the MBE Method Using H2S Gas Source

Shigeo Kaneda; Shuji Satou; Takao Setoyama; Shin-ichi Motoyama; Meiso Yokoyama; Norio Ota

doi:https://doi.org/10.7567/SSDM.1985.B-3-2

1985 Conference on Solid State Devices and Materials

Aug 25, 1985 - Aug 27, 1985
Nippon Toshi Center, Tokyo, Japan

[B-3-2] Single Crystal Growth of ZnS by the MBE Method Using H2S Gas Source

Shigeo Kaneda, Shuji Satou, Takao Setoyama, Shin-ichi Motoyama, Meiso Yokoyama, Norio Ota (1.Technological University of Nagaoka, 2.Nippon Seiki Co. Ltd.)

https://doi.org/10.7567/SSDM.1985.B-3-2

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