[B-4-4] A New Si Bipolar Transistor Using Amorphous SiC:H as a Wide-Gap Emitter

Kimihiro Sasaki、Seijiro Furukawa、Mohammad Mahmudur Rahman (1.Department of Applied Electronics, Graduate School of Sic. & Eng., Tokyo Inst. of Tech.)

https://doi.org/10.7567/SSDM.1985.B-4-4