A New Si Bipolar Transistor Using Amorphous SiC:H as a Wide-Gap Emitter

Kimihiro Sasaki; Seijiro Furukawa; Mohammad Mahmudur Rahman

doi:https://doi.org/10.7567/SSDM.1985.B-4-4

1985 Conference on Solid State Devices and Materials

Aug 25, 1985 - Aug 27, 1985
Nippon Toshi Center, Tokyo, Japan

[B-4-4] A New Si Bipolar Transistor Using Amorphous SiC:H as a Wide-Gap Emitter

Kimihiro Sasaki, Seijiro Furukawa, Mohammad Mahmudur Rahman (1.Department of Applied Electronics, Graduate School of Sic. & Eng., Tokyo Inst. of Tech.)

https://doi.org/10.7567/SSDM.1985.B-4-4

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