[B-4-6] High-Current, High-Frequency Gate Turn-Off Thyristors with P+P-Anode Emitter Structure

Makoto Azuma、Takashi Shinohe、Katsuhiko Takigami、Hiromichi Ohashi (1.Toshiba Research and Development Center)

https://doi.org/10.7567/SSDM.1985.B-4-6