[B-5-9] Threshold Voltage Homogeneity and Electrical Properties of GaAs MESFETs on In-Doped Dislocation-Free Substrate

Y. Tanaka、T. Matsumura、F. Shimura、M. Kanamori、A. Higashisaka (1.2nd LSI Div., NEC Corp.、2.Microelectronics Res. Labs., NEC Corp.)

https://doi.org/10.7567/SSDM.1985.B-5-9