[C-1-3] Artificially-Designed P-Type Amorphous Semiconductor Produced from Boron-Doped a-Si: H/ Undoped a-Si1-xNx:H Superlattices

Seiichi Miyazaki、Naoki Murayama、Masataka Hirose (1.Department of Electrical Engineering, Hiroshima university)

https://doi.org/10.7567/SSDM.1985.C-1-3