The Japan Society of Applied Physics

[A-3-7] Selective Epitaxial Growth of Si and in Situ Deposition of Amorphous- or Poly-Si for Recrystallisation Purposes

L. KARAPIPERIS, G. GARRY, D. DIEUMEGARD (1.Laboratoire Central de Recherches, THOMSON-CSF)

https://doi.org/10.7567/SSDM.1986.A-3-7