[B-3-4] High-Temperature Characteristics of CVD-Grown β-SiC p-n Junction Diodes

Akira Suzuki、Atsuko Uemoto、Mitsuhiro Shigeta、Katsuki Furukawa、Shigeo Nakajima (1.Central Research Laboratories, Engineering Center, Sharp Corporation)

https://doi.org/10.7567/SSDM.1986.B-3-4