[C-11-5] Deep Level Characterization for Aluminum Doped ZnSe Grown by MOCVD

A. Kamata、Y. Zohta、M. Kawachi、T. Sato、M. Okajima、K. Hirahara、T. Beppu (1.Toshiba R&D Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1986.C-11-5