[C-3-3] Formation of Buried Isolation Layer by Implanting Focused B Ion Beam in GaAs Multilayer Using FIBI-MBE System
Hiroshi Arimoto、Tetsuo Morita、Akira Takamori、Yasuo Bamba、Eizo Miyauchi、Hisao Hashimoto
(1.Optoelectronics Joint Research Laboratory)
https://doi.org/10.7567/SSDM.1986.C-3-3
