[C-8-1] Effect of Barrier Configuration and Interface Quality on Structural and Electronic Properties of MBE Grown GaAs/AlxGa1-xAs, GaSb/AlxGa1-xSb, and GaxIn1-xAs/AlxIn1-xAs Superlattices

Klaus Ploog (1.Max-Planck-Institut fur Festkorperforschung)

https://doi.org/10.7567/SSDM.1986.C-8-1