[D-11-5] Efficiency Improvement in Amorphous SiGe:H Solar Cells by the Use of a Graded Bandgap Layer at the i/n Interface

S. Yamanaka, S. Yoshida, M. Konagai, K. Takahashi (1.Department of Physical Electronics, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.1986.D-11-5