[C-2-3] Heteroepitaxy of GaAs on Si with Intermediate Layers of Evaporated Ge and Recrystallized Ge-on-Insulator (GOI)

El-Hang Lee, M. Abdul Awal, Eric Y. Chan (1.AT&T Engineering Research Center)

1986 International Conference on Solid State Devices and Materials |PDF Download

[C-2-4] Effect of Substrate Orientation on the Photoluminescence of GaAs on Si

Y. Kajikawa, S. Ochi, N. Hayafuji, K. Mizuguchi, R. Hirano, T. Murotani (1.LSI R&D Laboratory, Mitsubishi Electric Corporation)

1986 International Conference on Solid State Devices and Materials |PDF Download

[C-3-1] GaAs and AlGaAs Surface Cleaning Using an ECR Radical Beam Gun

K. Asakawa (1.Optoelectronics Joint Research Laboratory)

1986 International Conference on Solid State Devices and Materials |PDF Download

[C-3-2] UV Cleaning Effect of GaAs Surface in NH3 Gas Prior to Photo CVD

N. Yoshida, K. Mizuguchi, T. Murotani, K. Fujikawa (1.LSI R&D Laboratory, Mitsubishi Electric Corporation)

1986 International Conference on Solid State Devices and Materials |PDF Download

[C-3-3] Formation of Buried Isolation Layer by Implanting Focused B Ion Beam in GaAs Multilayer Using FIBI-MBE System

Hiroshi Arimoto, Tetsuo Morita, Akira Takamori, Yasuo Bamba, Eizo Miyauchi, Hisao Hashimoto (1.Optoelectronics Joint Research Laboratory)

1986 International Conference on Solid State Devices and Materials |PDF Download

[C-3-4] Selective Double Diffusion of Zn and Si into GaAs Using Sputtered Si Masks

E. Omura, G. A. Vawter, X. S. Wu, L. A. Coldren, J. L. Merz (1.Department of Electrical and Computer Engineering University of California)

1986 International Conference on Solid State Devices and Materials |PDF Download

[C-3-5] Disorder Induced Gap State Model for Anomalous C-V Carrier Concentration Profiles at Epitaxially Grown Interfaces

Hideki Hasegawa, Eiji Ikeda, Hideo Ohno (1.Department of Electrical Engineering, Faculty of Engineering Hokkaido University)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-1-1] AlGaInP Visible Semiconductor Lasers Grown by Metalorganic Vapor Phase Epitaxy

Tohru Suzuki (1.Opto-electronics Research Laboratories, NEC Corporation)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-1-2] InGaAlP Transverse Mode Stabilized Visible Laser Diodes Fabricated by MOCVD Selective Growth

Masayuki Ishikawa, Yasuo Ohba, Yukio Watanabe Hiroko Nagasaka, Hideto Sugawara Motoyuki Yamamoto, Gen-ichi Hatakoshi (1.Research and Development Center, Toshiba Corporation)

1986 International Conference on Solid State Devices and Materials |PDF Download

[D-2-1] Intraband Relaxation Dynamics of Photo-Excited Carriers in GaAs and Related Compounds

C. L. Tang, F. W. Wise, M. J. Rosker (1.Cornell University)

1986 International Conference on Solid State Devices and Materials |PDF Download