[A-2-1] The Improvement of LDD MOSFET's Characteristics by the Oblique-Rotating Ion Implantation

T. Eimori, H. Ozaki, H. Oda, S. Ohsaki, J. Mitsuhashi, S. Satoh, T. Matsukawa (1.LSI R & D Laboratory, Mitsubishi Electric Corp.)

https://doi.org/10.7567/SSDM.1987.A-2-1