[A-2-1] The Improvement of LDD MOSFET's Characteristics by the Oblique-Rotating Ion Implantation
T. Eimori、H. Ozaki、H. Oda、S. Ohsaki、J. Mitsuhashi、S. Satoh、T. Matsukawa
(1.LSI R & D Laboratory, Mitsubishi Electric Corp.)
https://doi.org/10.7567/SSDM.1987.A-2-1
