Improved Bipolar-Mode MOSFETs(IGBT) with Self-Aligning Technique and Wafer Bonding(SDB) -Why is the Bipolar-Mode MOSFET SOA Large?-

[A-3-1] Improved Bipolar-Mode MOSFETs(IGBT) with Self-Aligning Technique and Wafer Bonding(SDB) -Why is the Bipolar-Mode MOSFET SOA Large?-

Akio NAKAGAWA, Yoshihiro YAMAGUCHI, Kiminori WATANABE (1.Toshiba Research & Development Center)