Low Energy Ion Etching of GaAs and Si Using a New Type of Ion Source Excited by an Electron Beam

Jin-Zhong YU; Tamio HARA; Takashi YOSHINAGA; Manabu HAMAGAKI; Yoshinobu AOYAGI; Susumu NAMBA

doi:https://doi.org/10.7567/SSDM.1987.B-1-4

[B-1-4] Low Energy Ion Etching of GaAs and Si Using a New Type of Ion Source Excited by an Electron Beam

Jin-Zhong YU、Tamio HARA、Takashi YOSHINAGA、Manabu HAMAGAKI、Yoshinobu AOYAGI、Susumu NAMBA (1.The Institute of Physical and Chemical Research (RIKEN)、2.Institute of Semiconductors, Chinese Academy of Sciences、3.Central Research Laboratory, Tokyo Electron Limited)

https://doi.org/10.7567/SSDM.1987.B-1-4

1987 Conference on Solid State Devices and Materials

[B-1-4] Low Energy Ion Etching of GaAs and Si Using a New Type of Ion Source Excited by an Electron Beam