Low Energy Ion Etching of GaAs and Si Using a New Type of Ion Source Excited by an Electron Beam

Jin-Zhong YU; Tamio HARA; Takashi YOSHINAGA; Manabu HAMAGAKI; Yoshinobu AOYAGI; Susumu NAMBA

doi:https://doi.org/10.7567/SSDM.1987.B-1-4

[B-1-4] Low Energy Ion Etching of GaAs and Si Using a New Type of Ion Source Excited by an Electron Beam

Jin-Zhong YU, Tamio HARA, Takashi YOSHINAGA, Manabu HAMAGAKI, Yoshinobu AOYAGI, Susumu NAMBA (1.The Institute of Physical and Chemical Research (RIKEN), 2.Institute of Semiconductors, Chinese Academy of Sciences, 3.Central Research Laboratory, Tokyo Electron Limited)

https://doi.org/10.7567/SSDM.1987.B-1-4

1987 Conference on Solid State Devices and Materials

[B-1-4] Low Energy Ion Etching of GaAs and Si Using a New Type of Ion Source Excited by an Electron Beam