Low Noise and Low Astigmatic Properties of GaAlAs Laser Diodes with ZnSe Layer Grown by Adduct-Source MOCVD

H. Iwano; Y. Tsunekawa; M. Shimada; H. Komatsu; T. Seki; Y. Yamazaki; T. Takamura; H. Ohshima

doi:https://doi.org/10.7567/SSDM.1987.B-3-1

[B-3-1] Low Noise and Low Astigmatic Properties of GaAlAs Laser Diodes with ZnSe Layer Grown by Adduct-Source MOCVD

H. Iwano, Y. Tsunekawa, M. Shimada, H. Komatsu, T. Seki, Y. Yamazaki, T. Takamura, H. Ohshima (1.Research and Development Div., SEIKO EPSON CORPORATION)

https://doi.org/10.7567/SSDM.1987.B-3-1

1987 Conference on Solid State Devices and Materials

[B-3-1] Low Noise and Low Astigmatic Properties of GaAlAs Laser Diodes with ZnSe Layer Grown by Adduct-Source MOCVD