[B-3-1] Low Noise and Low Astigmatic Properties of GaAlAs Laser Diodes with ZnSe Layer Grown by Adduct-Source MOCVD

H. Iwano、Y. Tsunekawa、M. Shimada、H. Komatsu、T. Seki、Y. Yamazaki、T. Takamura、H. Ohshima (1.Research and Development Div., SEIKO EPSON CORPORATION)

https://doi.org/10.7567/SSDM.1987.B-3-1