Piezoresistance Effect in n-Type and p-Type Al0.3 Ga0.7 As/GaAs Selectively Doped Heterostructure

T. Kato; H. Kano; M. Hashimoto; H. Sakaki; I. Igarashi

doi:https://doi.org/10.7567/SSDM.1987.B-5-3

[B-5-3] Piezoresistance Effect in n-Type and p-Type Al0.3 Ga0.7 As/GaAs Selectively Doped Heterostructure

T. Kato, H. Kano, M. Hashimoto, H. Sakaki, I. Igarashi (1.Toyota Central Research and Development Laboratories Inc., 2.Institute of Industrial Science, The University of Tokyo)

https://doi.org/10.7567/SSDM.1987.B-5-3

1987 Conference on Solid State Devices and Materials

[B-5-3] Piezoresistance Effect in n-Type and p-Type Al0.3 Ga0.7 As/GaAs Selectively Doped Heterostructure