Electron-Beam Exposure Epitaxy (EBE-Epitaxy) for the Formation of SOI-GaAs Films on CaF2/Si(111) Structures

Hee Chul LEE; Tanemasa ASANO; Hiroshi ISHIWARA; Seigo KANEMARU; Seijiro FURUKAWA

doi:https://doi.org/10.7567/SSDM.1987.B-7-2

[B-7-2] Electron-Beam Exposure Epitaxy (EBE-Epitaxy) for the Formation of SOI-GaAs Films on CaF2/Si(111) Structures

Hee Chul LEE、Tanemasa ASANO、Hiroshi ISHIWARA、Seigo KANEMARU、Seijiro FURUKAWA (1.Graduate School of Science and Engineering, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.1987.B-7-2

1987 Conference on Solid State Devices and Materials

[B-7-2] Electron-Beam Exposure Epitaxy (EBE-Epitaxy) for the Formation of SOI-GaAs Films on CaF2/Si(111) Structures