[B-9-2LN] Sharp Photoluminescence of the GaAs/AlGaAs SQWs Grown on Si Substrate by MEE at 300℃

M. Naganuma, W. Stolz, Y. Horikoshi (1.NTT Electrical Communications Loboratories)

https://doi.org/10.7567/SSDM.1987.B-9-2LN