[B-9-4LN] Power AlGaAs Hetero-MIS Gate InP Field Effect Transistors

K. Asano、T. Itoh、K. Kasahara、T. Ozawa、K. Ohata (1.Microelectronics Research Laboratories, NEC Corporation)

https://doi.org/10.7567/SSDM.1987.B-9-4LN