[C-3-2] Electron Spin Resonance Study of a New Positively Charged Defect in Device Oxides Damaged by Soft X-Rays

B. B. Triplett、T. Takahashi、K. Yokogawa、T. Sugano (1.Dept. of Electronic Engineering, University of Tokyo、2.Intel Researcher in Residence、3.Nippon Steel Corporation)

https://doi.org/10.7567/SSDM.1987.C-3-2