Step-Controlled VPE Growth of SiC Single Crystals at Low Temperatures

Naotaka KURODA; Kentaro SHIBAHARA; Woosik YOO; Shigehiro NISHINO; Hiroyuki MATSUNAMI

doi:https://doi.org/10.7567/SSDM.1987.C-4-2

[C-4-2] Step-Controlled VPE Growth of SiC Single Crystals at Low Temperatures

Naotaka KURODA、Kentaro SHIBAHARA、Woosik YOO、Shigehiro NISHINO、Hiroyuki MATSUNAMI (1.Department of Electrical Engineering, Kyoto University、2.Department of Electrical Engineering, Kyoto Institute of Technology)

https://doi.org/10.7567/SSDM.1987.C-4-2

1987 Conference on Solid State Devices and Materials

[C-4-2] Step-Controlled VPE Growth of SiC Single Crystals at Low Temperatures