Step-Controlled VPE Growth of SiC Single Crystals at Low Temperatures

Naotaka KURODA; Kentaro SHIBAHARA; Woosik YOO; Shigehiro NISHINO; Hiroyuki MATSUNAMI

doi:https://doi.org/10.7567/SSDM.1987.C-4-2

[C-4-2] Step-Controlled VPE Growth of SiC Single Crystals at Low Temperatures

Naotaka KURODA, Kentaro SHIBAHARA, Woosik YOO, Shigehiro NISHINO, Hiroyuki MATSUNAMI (1.Department of Electrical Engineering, Kyoto University, 2.Department of Electrical Engineering, Kyoto Institute of Technology)

https://doi.org/10.7567/SSDM.1987.C-4-2

1987 Conference on Solid State Devices and Materials

[C-4-2] Step-Controlled VPE Growth of SiC Single Crystals at Low Temperatures