Selective Growth and Schottky Diode Characteristics of β-SiC Single Crystal Films on Si (111) Substrates by Chemical Vapor Deposition

Katsuki FURUKAWA; Atsuko UEMOTO; Yoshihisa FUJII; Mitsuhiro SHIGETA; Akira SUZUKI; Shigeo NAKAJIMA

doi:https://doi.org/10.7567/SSDM.1987.C-4-3

[C-4-3] Selective Growth and Schottky Diode Characteristics of β-SiC Single Crystal Films on Si (111) Substrates by Chemical Vapor Deposition

Katsuki FURUKAWA、Atsuko UEMOTO、Yoshihisa FUJII、Mitsuhiro SHIGETA、Akira SUZUKI、Shigeo NAKAJIMA (1.Central Research Laboratories, Engineering Center Sharp Corporation)

https://doi.org/10.7567/SSDM.1987.C-4-3

1987 Conference on Solid State Devices and Materials

[C-4-3] Selective Growth and Schottky Diode Characteristics of β-SiC Single Crystal Films on Si (111) Substrates by Chemical Vapor Deposition